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And here, come to our end, two different fixed core height of 220nm and 200nm, respectively, with varied core width of 300nm to 600nm at the steps of 100nm are presented in both TE and TM MODE.
Based on the simulation results, we can clearly see the impact of each design parameters on effective index.
It is seen that with a thicker silicon core height and core width, higher effective index can be achieved.
By analyzing the graphs of effective indices for 4 modes, the determination of fundamental or higher order mode can be accomplished.
From the simulation results, it is clearly observed that TE polarization mode has a much higher effective index than TM polarization.
From the analysis of both graphs, it is seen that as the silicon core width with a value greater than 450nm will easily excite undesirable higher-order modes and may results in more noise and losses. |
IEEE/ICACT20210161 Slide.14
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